Paʻi-Paʻi IGBT
Paʻi paʻi IGBT (IEGT)
| ANO | VDRM V | VRRM V | IT(AV)@80℃ A | ITGQM@CS A / µF | ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃/W | |
| CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
| CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
| CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
| CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
| CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
| CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
| CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Nānā:D- me dʻāpana iode, A-me ka hapa diode
ʻO ka mea maʻamau, ua hoʻohana ʻia nā modules IGBT contact solder i ka mīkini hoʻololi o ka ʻōnaehana hoʻoili DC maʻalahi.ʻO ka pūʻolo module he hoʻokahi ʻaoʻao wela wela.He palena ʻole ka mana o ka hāmeʻa a ʻaʻole kūpono ke hoʻopili ʻia i ka moʻo, maikaʻi ʻole ke ola i ka ea paʻakai, haʻalulu maikaʻi ʻole a i ʻole ka luhi wela.
ʻAʻole hoʻopau wale ka mea paʻi paʻi paʻi kiʻekiʻe kiʻekiʻe paʻi-pack IGBT i nā pilikia o ka hakahaka i ke kaʻina hana soldering, ka luhi wela o ka mea kūʻai aku a me ka haʻahaʻa haʻahaʻa o ka hoʻoheheʻe ʻana o ka wela hoʻokahi ʻaoʻao akā e hoʻopau pū i ka pale wela ma waena o nā ʻāpana like ʻole. e hoemi i ka nui a me ke kaumaha.A hoʻomaikaʻi nui i ka pono hana a me ka hilinaʻi o ka mea IGBT.He mea kūpono ia e hoʻokō i ka mana kiʻekiʻe, kiʻekiʻe-voltage, kiʻekiʻe-hilinaʻi koi o ka ʻōnaehana hoʻoili DC maʻalahi.
He mea nui ka hoʻololi ʻana o ke ʻano hoʻopili solder e ka press-pack IGBT.
Mai ka makahiki 2010, ua hoʻomohala ʻia ka Runau Electronics e hoʻomohala i kahi mea paʻi paʻi paʻi IGBT hou a lanakila i ka hana ʻana ma 2013. Ua hōʻoia ʻia ka hana e ka hōʻoia ʻāina a ua hoʻopau ʻia ka hopena ʻoki.
I kēia manawa hiki iā mākou ke hana a hāʻawi i nā pūʻulu paʻi paʻi IGBT o ka laulā IC ma 600A a 3000A a me VCES ma 1700V a 6500V.Manaʻo nui ʻia ka manaʻo maikaʻi o ka paʻi paʻi IGBT i hana ʻia ma Kina e hoʻohana ʻia ma Kina ka ʻōnaehana hoʻoili DC maʻalahi a lilo ia i pōhaku mile papa honua ʻē aʻe o ka ʻoihana uila uila Kina ma hope o ke kaʻaahi uila kiʻekiʻe.
Hoʻopuka pōkole o ke ʻano maʻamau:
1. Ke ano: kaomi-pack IGBT CSG07E1700
●Nā hiʻohiʻona uila ma hope o ka hoʻopili ʻana a me ke kaomi ʻana
● Hulikaulikepilidiode ho'ōla wikiwikihoʻopau ʻia
● Pākuʻi:
Waiwai i koho ʻia（25℃）
a.Voltage Emitter Voltage: VGES=1700（V）
b.Puke Emitter Voltage: VCES=±20（V）
c.ʻĀpana ʻohi: IC=800（A）ICP=1600（A）
d.Hoʻopau mana ʻohi: PC=4440（W）
e.Ka Mahana Huina Hana: Tj=－20~125℃
f.Ka Mahana Waihona: Tstg=－40~125℃
Hoʻomaopopo ʻia: e pōʻino ka hāmeʻa inā ʻoi aku ka waiwai i helu ʻia
UilaCnā mea hana ʻino, TC＝125℃，Rth (pale wela ohui ana ihihia）ʻaʻole i hoʻokomo ʻia
a.Ka Leaka ʻīpuka o kēia manawa: IGES=±5（μA）
b.ʻO ka mea hōʻiliʻili emitter e ālai ana i ka ICES o kēia manawa=250（mA）
c.ʻO ka mea hōʻiliʻili Emitter Saturation Voltage: VCE(sat)=6(V)
d.ʻUmi Uila Paepae Puka Puka: VGE(th)=10(V)
e.Hoʻomaka ka manawa: Ton=2.5μs
f.Hoʻopau manawa: Toff=3μs
2. Ke ano: kaomi-pack IGBT CSG10F2500
●Nā hiʻohiʻona uila ma hope o ka hoʻopili ʻana a me ke kaomi ʻana
● Hulikaulikepilidiode ho'ōla wikiwikihoʻopau ʻia
● Pākuʻi:
Waiwai i koho ʻia（25℃）
a.Voltage Emitter Voltage: VGES=2500（V）
b.Puke Emitter Voltage: VCES=±20（V）
c.ʻĀpana ʻohi: IC=600（A）ICP=2000（A）
d.Hoʻopau mana ʻohi: PC=4800（W）
e.Ka Mahana Huina Hana: Tj=－40~125℃
f.Ka Mahana Waihona: Tstg=－40~125℃
Hoʻomaopopo ʻia: e pōʻino ka hāmeʻa inā ʻoi aku ka waiwai i helu ʻia
UilaCnā mea hana ʻino, TC＝125℃，Rth (pale wela ohui ana ihihia）ʻaʻole i hoʻokomo ʻia
a.Ka Leaka ʻīpuka o kēia manawa: IGES=±15（μA）
b.ʻO ka mea hōʻiliʻili emitter e ālai ana i ka ICES o kēia manawa=25（mA）
c.ʻO ka mea hōʻiliʻili Emitter Saturation Voltage: VCE(sat)=3.2 (V)
d.ʻUmi Uila Paepae Puka Puka: VGE(th)=6.3(V)
e.Hoʻomaka ka manawa: Ton=3.2μs
f.Hoʻopau manawa: Toff=9.8μs
g.Volta i mua o ka Diode: VF=3.2 V
h.Manawa hoʻihoʻi hou ʻana o Diode: Trr=1.0 μs
3. Ke ano: kaomi-pack IGBT CSG10F4500
●Nā hiʻohiʻona uila ma hope o ka hoʻopili ʻana a me ke kaomi ʻana
● Hulikaulikepilidiode ho'ōla wikiwikihoʻopau ʻia
● Pākuʻi:
Waiwai i koho ʻia（25℃）
a.Voltage Emitter Voltage: VGES=4500（V）
b.Puke Emitter Voltage: VCES=±20（V）
c.ʻĀpana ʻohi: IC=600（A）ICP=2000（A）
d.Hoʻopau mana ʻohi: PC=7700（W）
e.Ka Mahana Huina Hana: Tj=－40~125℃
f.Ka Mahana Waihona: Tstg=－40~125℃
Hoʻomaopopo ʻia: e pōʻino ka hāmeʻa inā ʻoi aku ka waiwai i helu ʻia
UilaCnā mea hana ʻino, TC＝125℃，Rth (pale wela ohui ana ihihia）ʻaʻole i hoʻokomo ʻia
a.Ka Leaka ʻīpuka o kēia manawa: IGES=±15（μA）
b.ʻO ka mea hōʻiliʻili emitter e ālai ana i ka ICES o kēia manawa=50（mA）
c.Ka Voltage Hoʻohuihui Mea ʻOhi: VCE(sat)=3.9 (V)
d.ʻUmi Uila Paepae Puka Puka: VGE(th)=5.2 (V)
e.Hoʻomaka ka manawa: Ton=5.5μs
f.Hoʻopau manawa: Toff=5.5μs
g.Puke uila diode: VF=3.8 V
h.Manawa hoʻihoʻi hou ʻana o Diode: Trr=2.0 μs
Nānā:He mea maikaʻi ka Press-pack IGBT i ka hilinaʻi mechanical kiʻekiʻe o ka wā lōʻihi, ke kūpaʻa kiʻekiʻe i ka pōʻino a me nā hiʻohiʻona o ka hale paʻi pili paʻi, maʻalahi ke hoʻohana ʻia i ka hāmeʻa series, a hoʻohālikelike ʻia me ka thyristor GTO kuʻuna, ʻo IGBT ke ʻano uila-drive. .No laila, maʻalahi ka hana, palekana a ākea ka hana hana.