ʻO ka chip thyristor i hana ʻia e RUNAU Electronics i hoʻolauna mua ʻia e ka GE processing standard a me ka ʻenehana e hoʻokō nei i ka maʻamau noi noi USA a kūpono ʻia e nā mea kūʻai aku o ka honua.Ua hōʻike 'ia i loko o ka ikaika thermal fatigue 'ano kū'ē, lōʻihi lawelawe ola, kiʻekiʻe voltage, nui o keia manawa, ikaika kaiapuni adaptability, etc. I ka makahiki 2010, RUNAU Electronics hoʻomohala hou kumu o thyristor chip i hui i ka kuʻuna pono o GE a me Europa 'enehana, ka hana a me ua hoʻonui nui ʻia ka pono.
ʻĀpana:
Anawaena mm | mānoanoa mm | Voltage V | Ipuka Dia. mm | Cathode Inner Dia. mm | Cathode Out Dia. mm | ʻO Tjm ℃ |
25.4 | 1.5±0.1 | ≤2000 | 2.5 | 5.6 | 20.3 | 125 |
25.4 | 1.6-1.8 | 2200-3500 | 2.6 | 5.6 | 15.9 | 125 |
29.72 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 24.5 | 125 |
32 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 26.1 | 125 |
35 | 2±0.1 | ≤2000 | 3.8 | 7.6 | 29.1 | 125 |
35 | 2.1-2.4 | 2200-4200 | 3.8 | 7.6 | 24.9 | 125 |
38.1 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 32.8 | 125 |
40 | 2±0.1 | ≤2000 | 3.3 | 7.7 | 33.9 | 125 |
40 | 2.1-2.4 | 2200-4200 | 3.5 | 8.1 | 30.7 | 125 |
45 | 2.3±0.1 | ≤2000 | 3.6 | 8.8 | 37.9 | 125 |
50.8 | 2.5±0.1 | ≤2000 | 3.6 | 8.8 | 43.3 | 125 |
50.8 | 2.6-2.9 | 2200-4200 | 3.8 | 8.6 | 41.5 | 125 |
50.8 | 2.6-2.8 | 2600-3500 | 3.3 | 7 | 41.5 | 125 |
55 | 2.5±0.1 | ≤2000 | 3.3 | 8.8 | 47.3 | 125 |
55 | 2.5-2.9 | ≤4200 | 3.8 | 8.6 | 45.7 | 125 |
60 | 2.6-3.0 | ≤4200 | 3.8 | 8.6 | 49.8 | 125 |
63.5 | 2.7-3.1 | ≤4200 | 3.8 | 8.6 | 53.4 | 125 |
70 | 3.0-3.4 | ≤4200 | 5.2 | 10.1 | 59.9 | 125 |
76 | 3.5-4.1 | ≤4800 | 5.2 | 10.1 | 65.1 | 125 |
89 | 4-4.4 | ≤4200 | 5.2 | 10.1 | 77.7 | 125 |
99 | 4.5-4.8 | ≤3500 | 5.2 | 10.1 | 87.7 | 125 |
ʻIkepili ʻenehana:
Hāʻawi ʻo RUNAU Electronics i nā ʻāpana semiconductor mana o ka thyristor i hoʻokele ʻia a me ka thyristor hoʻololi wikiwiki.
1. Haʻahaʻa haʻahaʻa ma ka moku'āina hāʻule uila
2. ʻOi aku ka mānoanoa o ka papa alumini ma mua o 10 microns
3. Mesa pale papa ʻelua
Manaʻo kōkua:
1. I mea e hoʻomau ai i ka hana ʻoi aku ka maikaʻi, e mālama ʻia ka chip i loko o ka nitrogen a i ʻole ke kūlana vacuum i mea e pale ai i ka hoʻololi ʻana o ka voltage i hana ʻia e ka oxidation a me ka haʻahaʻa o nā ʻāpana molybdenum.
2. E hoʻomaʻemaʻe mau i ka ʻili o ka chip, e ʻoluʻolu e hoʻokomo i nā mīkina lima a mai hoʻopā i ka chip me nā lima ʻole
3. E hana pono i ke kaʻina hana.Mai hōʻino i ka ʻili o ka resin a me ka papa alumini ma ka ʻāpana pole o ka puka a me ka cathode
4. I ka hoʻāʻo ʻana a i ʻole encapsulation, e ʻoluʻolu e hoʻomaopopo ʻo ka parallelism, flatness a me ka hoʻopaʻa ʻana i ka ikaika o ka mea paʻa e pono e kūlike me nā kūlana i kuhikuhi ʻia.ʻO ka hoʻohālikelike maikaʻi ʻole e hopena i ke kaomi ʻole a me ka pōʻino chip ma ka ikaika.Inā ʻoi aku ka ikaika o ka hoʻopili ʻana, e pōʻino maʻalahi ka chip.Inā liʻiliʻi loa ka ikaika o ka clamp, e hoʻopilikia ka hoʻopili maikaʻi ʻole a me ka wela wela i ka noi.
5. Pono e hoʻopili ʻia ka poloka kaomi e pili ana me ka ʻili cathode o ka chip
Manaʻo Clamp Force
Ka nui o nā chips | Manaʻo Clamp Force |
(KN)±10% | |
Φ25.4 | 4 |
Φ30 a i ʻole Φ30.48 | 10 |
Φ35 | 13 |
Φ38 a i ʻole Φ40 | 15 |
Φ50.8 | 24 |
Φ55 | 26 |
Φ60 | 28 |
Φ63.5 | 30 |
Φ70 | 32 |
Φ76 | 35 |
Φ85 | 45 |
Φ99 | 65 |